Work

Carrier profile designing to suppress systematic Vth variation related with device layout by controlling STI-enhanced dopant diffusions correlated with point defects

Year: 2009

Type: conference-paper

Source: Technical digest - International Electron Devices Meeting/Technical digest

DOI: 10.1109/iedm.2009.5424423

Authors: H. Fukutome, Y. Momiyama, A. Satoh, Y. Tamura, H. Minakata, K. Okabe, E. Mutoh, K. Suzuki, A. Usujima, H. Arimoto, S. Satoh

Institution: Fujitsu Semiconductor (Japan)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2093241760

FWCI: 0.958

Cites: 1

Cited by: 4

Related to: 10