Self-heating in high-power AlGaN-GaN HFETs
Year: 1998
Type: article
Source: IEEE Electron Device Letters
DOI: 10.1109/55.661174
Authors: R. Gaska, A. Osinsky, J.W. Yang, M.S. Shur
Institution: Rensselaer Polytechnic Institute
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2096074167