Get started
Author

J. Yang

Observed names: J W Yang, J Yang, J. W. Yang, J. YANG, J.-W. YANG, J.W. Yang, Joonghwan Yang
Institution: LG (South Korea)
ORCID: 0000-0002-0680-9105
Observed ORCID: 0000-0002-0680-9105
OpenAlex ID: A5016567418
AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor
2000 · M.A. Khan, X. Hu, et al. · IEEE Electron Device Letters · 383
AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates
2000 · M. Asif Khan, X. Hu, et al. · Applied Physics Letters · 360
Self-heating in high-power AlGaN-GaN HFETs
1998 · R. Gaska, A. Osinsky, et al. · IEEE Electron Device Letters · 306
AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz
2002 · V. Kumar, W. Lu, et al. · IEEE Electron Device Letters · 229
Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates
1998 · R. Gaska, J. W. Yang, et al. · Applied Physics Letters · 218
Enhancement mode AlGaN/GaN HFET with selectivelygrown pn junction gate
2000 · X. Hu, G. Simin, et al. · Electronics Letters · 196
Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors
1996 · M. Asif Khan, Q. Chen, et al. · Applied Physics Letters · 187
High-power 10-GHz operation of AlGaN HFET's on insulating SiC
1998 · G.J. Sullivan, M.Y. Chen, et al. · IEEE Electron Device Letters · 121
SiO 2 -passivated lateral-geometry GaN transparent Schottky-barrier detectors
2000 · V. Adivarahan, G. Simin, et al. · Applied Physics Letters · 108
High quality GaN–InGaN heterostructures grown on (111) silicon substrates
1996 · J. W. Yang, C. J. Sun, et al. · Applied Physics Letters · 104
GaN–AlGaN heterostructure field-effect transistors over bulk GaN substrates
2000 · M. Asif Khan, J. W. Yang, et al. · Applied Physics Letters · 103
Thermal management of AlGaN-GaN HFETs on sapphire using flip-chip bonding with epoxy underfill
2003 · Jie Sun, H. Fatima, et al. · IEEE Electron Device Letters · 101
Mechanism of radio-frequency current collapse in GaN–AlGaN field-effect transistors
2001 · A. Tarakji, G. Simin, et al. · Applied Physics Letters · 93
Submicron gate Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors
2003 · V. Adivarahan, M. Gaevski, et al. · IEEE Electron Device Letters · 85
Simulation of hot electron and quantum effects in AlGaN/GaN heterostructure field effect transistors
2004 · N. Braga, R. Mickevicius, et al. · Journal of Applied Physics · 81
Stable CW operation of field-plated GaN-AlGaN MOSHFETs at 19 W/mm
2005 · V. Adivarahan, J. Yang, et al. · IEEE Electron Device Letters · 76
Low-loss high power RF switching using multifinger AlGaN/GaN MOSHFETs
2002 · A. Koudymov, Xuhong Hu, et al. · IEEE Electron Device Letters · 71
Low-frequency noise in Al0.4Ga0.6N-based Schottky barrier photodetectors
2001 · S. L. Rumyantsev, N. Pala, et al. · Applied Physics Letters · 66
Piezoeffect and gate current in AlGaN/GaN high electron mobility transistors
1997 · R. Gaska, J. W. Yang, et al. · Applied Physics Letters · 60
Highly doped thin-channel GaN-metal–semiconductor field-effect transistors
2001 · R. Gaska, M. S. Shur, et al. · Applied Physics Letters · 50
Piezoelectric doping in AlInGaN/GaN heterostructures
1999 · M. Asif Khan, J. W. Yang, et al. · Applied Physics Letters · 48
High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with power density of over 4.5 W/mm at 20 GHz
2003 · V. Kumar, A. Kuliev, et al. · Solid-State Electronics · 41
GaN-based light-emitting diode with textured indium tin oxide transparent layer coated with Al2O3 powder
2009 · T. K. Kim, S. H. Kim, et al. · Applied Physics Letters · 36
DC and microwave performance of a GaN/AlGaN MOSHFET under high temperature stress
2002 · A Tarakji, X Hu, et al. · Solid-State Electronics · 35
High-power RF switching using III-nitride metal-oxide-semiconductor heterojunction capacitors
2005 · G. Simin, A. Koudymov, et al. · IEEE Electron Device Letters · 32
Works count: 61
Citation count: 3,614
H-index: 29
I10-index: 42
Year
Topic
Type