Work

AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates

Year: 2000

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.1290269

Authors: M. Asif Khan, X. Hu, A. Tarakji, G. Simin, J. Yang, R. Gaska, M. S. Shur

Institutions: University of South Carolina, Sensor Electronic Technology (United States), Rensselaer Polytechnic Institute

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1968007587

FWCI: 15.7

Cites: 7

Cited by: 360

Related to: 10