Work

SiO 2 -passivated lateral-geometry GaN transparent Schottky-barrier detectors

Year: 2000

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.1306647

Authors: V. Adivarahan, G. Simin, J. W. Yang, A. Lunev, M. Asif Khan, N. Pala, M. Shur, R. Gaska

Institutions: University of South Carolina, Rensselaer Polytechnic Institute

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2086079110

FWCI: 6.463

Cites: 8

Cited by: 108

Related to: 10