Work

Simulation of hot electron and quantum effects in AlGaN/GaN heterostructure field effect transistors

Year: 2004

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.1719262

Authors: N. Braga, R. Mickevicius, R. Gaska, X. Hu, M. S. Shur, M. Asif Khan, G. Simin, J. Yang

Institutions: Sensor Electronic Technology (United States), Rensselaer Polytechnic Institute, University of South Carolina

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1964218282

FWCI: 3.253

Cites: 20

Cited by: 81

Related to: 10