Work

High-power RF switching using III-nitride metal-oxide-semiconductor heterojunction capacitors

Year: 2005

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2004.841470

Authors: G. Simin, A. Koudymov, Z.-J. Yang, V. Adivarahan, J. Yang, M.A. Khan

Institution: University of South Carolina

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2129641946

FWCI: 1.44

Cites: 11

Cited by: 32

Related to: 10