Work

Improvement of radiation hardness in fully-depleted SOI n-MOSFETs using Ge-implantation

Year: 1994

Type: article

Source: IEEE Transactions on Nuclear Science

DOI: 10.1109/23.340578

Authors: Hua-Fang Wei, J.E. Chung, N.M. Kalkhoran, F. Namavar, N.K. Annamalai, W.M. Shedd

Institutions: Massachusetts Institute of Technology, Spire Corporation (United States)

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2104294479

FWCI: 2.939

Cites: 6

Cited by: 9

Related to: 10