Sub-100 nm silicon on insulator complimentary metal–oxide semiconductor transistors by deep ultraviolet optical lithography
Year: 2000
Type: article
DOI: 10.1116/1.1314387
Authors: M. Fritze, J. Burns, P. W. Wyatt, C. K. Chen, P. Gouker, C. L. Chen, C. Keast, D. Astolfi, D. Yost, D. Preble, A. Curtis, P. Davis, S. Cann, S. Deneault, H. Y. Liu
Institutions: MIT Lincoln Laboratory, Massachusetts Institute of Technology
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2131605789
