High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates
Year: 1999
Type: article
Source: IEEE Electron Device Letters
DOI: 10.1109/55.753753
Authors: S.T. Sheppard, K. Doverspike, W.L. Pribble, S.T. Allen, J.W. Palmour, L.T. Kehias, T.J. Jenkins
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2148954705