Work

High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior

Year: 2003

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2003.819248

Authors: W. Saito, Y. Takada, M. Kuraguchi, K. Tsuda, I. Omura, T. Ogura, H. Ohashi

Institution: Toshiba (Japan)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2149151998

FWCI: 7.13

Cites: 12

Cited by: 420

Related to: 10