Self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistor
Year: 2002
Type: article
Source: IEEE Electron Device Letters
Authors: M. Passlack, J.K. Abrokwah, R. Droopad, Zhiyi Yu, C. Overgaard, Sang In Yi, M. Hale, J. Sexton, A.C. Kummel
Institutions: Motorola (United States), University of California San Diego
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2155489586