Work

Why is nonvolatile ferroelectric memory field-effect transistor still elusive?

Year: 2002

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2002.1015207

Authors: T.P. Ma, Jin-Ping Han

Institution: Yale University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2160395018

FWCI: 7.429

Cites: 9

Cited by: 526

Related to: 10