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Jin‐Ping Han

Observed names: Han, J.-P., J. Han, J. P. Han, J.-P. Han, Jin-Ping Han, Jinping Han
Observed institutions: National Institute of Standards and Technology, IBM (United States), Infineon Technologies (Germany), NTT (Japan), Yale University, NTT Basic Research Laboratories, IBM Research - Thomas J. Watson Research Center, Infineon Technologies (United States), Eindhoven University of Technology
ORCID: 0000-0002-7011-6645
Observed ORCID: 0000-0002-7011-6645
OpenAlex ID: A5069154656
Why is nonvolatile ferroelectric memory field-effect transistor still elusive?
2002 · T.P. Ma, Jin-Ping Han · IEEE Electron Device Letters · 524
Ferroelectric Field Effect Transistors for Memory Applications
2010 · Jason Hoffman, Xiao Pan, et al. · Advanced Materials · 327
Mobility Measurement and Degradation Mechanisms of MOSFETs Made With Ultrathin High-k Dielectrics
2004 · W. Zhu, J.-P. Han, et al. · IEEE Transactions on Electron Devices · 257
NVM neuromorphic core with 64k-cell (256-by-256) phase change memory synaptic array with on-chip neuron circuits for continuous in-situ learning
2015 · S. Kim, M. Ishii, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 204
Electrode dependence of hydrogen-induced degradation in ferroelectric Pb(Zr,Ti)O3 and SrBi2Ta2O9 thin films
1997 · Jin-Ping Han, T. P. Ma · Applied Physics Letters · 144
A cost effective 32nm high-K/ metal gate CMOS technology for low power applications with single-metal/gate-first process
2008 · X. Chen, S. Samavedam, et al. · Symposium on VLSI Technology · 119
SrBi 2 Ta 2 O 9 memory capacitor on Si with a silicon nitride buffer
1998 · Jin-Ping Han, T. P. Ma · Applied Physics Letters · 95
High Inversion Current in Silicon Nanowire Field Effect Transistors
2004 · Sang-Mo Koo, Akira Fujiwara, et al. · Nano Letters · 92
Confined PCM-based Analog Synaptic Devices offering Low Resistance-drift and 1000 Programmable States for Deep Learning
2019 · W. Kim, R.L. Bruce, et al. · Symposium on VLSI Technology · 74
Ferroelectric DRAM (FEDRAM) FET with metal/SrBi 2 Ta 2 O/sub 9//SiN/Si gate structure
2002 · Kwang-Ho Kim, Jin-Ping Han, et al. · IEEE Electron Device Letters · 57
Transistor Mismatch Properties in Deep-Submicrometer CMOS Technologies
2011 · Xiaobin Yuan, Takashi Shimizu, et al. · IEEE Transactions on Electron Devices · 50
Biodiversifying bioinspiration
2018 · Rolf Müller, Nicole Abaid, et al. · Bioinspiration & Biomimetics · 41
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Asymmetric Energy Distribution of Interface Traps in n- and p-MOSFETs With $hbox HfO _2$ Gate Dielectric on Ultrathin SiON Buffer Layer
2004 · J.-P. Han, E.M. Vogel, et al. · IEEE Electron Device Letters · 38
Precision of synaptic weights programmed in phase-change memory devices for deep learning inference
2020 · S. R. Nandakumar, Irem Boybat, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 37
Ferroelectric-gate transistor as a capacitor-less DRAM cell (FEDRAM)
1999 · Jin-Ping Han, T. P. Ma · Integrated ferroelectrics · 27
Influence of buffer layer thickness on memory effects of SrBi2Ta2O9∕SiN∕Si structures
2004 · Jin-Ping Han, Sang-Mo Koo, et al. · Applied Physics Letters · 26
Mushroom-Type phase change memory with projection liner: An array-level demonstration of conductance drift and noise mitigation
2021 · R.L. Bruce, S. Ghazi Sarwat, et al. · IEEE International Reliability Physics Symposium proceedings · 23
High Performance Transistors Featured in an Aggressively Scaled 45nm Bulk CMOS Technology
2007 · Z. Luo, N. Rovedo, et al. · Symposium on VLSI Technology · 20
JVD silicon nitride as tunnel dielectric in p-channel flash memory
2002 · Min She, Tsu-Jae King, et al. · IEEE Electron Device Letters · 20
Energy distribution of interface traps in high-k gated MOSFETs
2004 · J.-P. Han, E.M. Vogel, et al. · Symposium on VLSI Technology · 19
Channel Length and Threshold Voltage Dependence of Transistor Mismatch in a 32-nm HKMG Technology
2010 · Terence B Hook, Jeffrey B Johnson, et al. · IEEE Transactions on Electron Devices · 18
Memory effects of SrBi2Ta2O9 capacitor on silicon with a silicon nitride buffer
1998 · Jin-Ping Han, Xin Guo, et al. · Integrated ferroelectrics · 17
Optimization of Projected Phase Change Memory for Analog In‐Memory Computing Inference
2023 · Ning Li, Charles Mackin, et al. · Advanced Electronic Materials · 13
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Energy Distribution of Interface Traps in High-K Gated MOSFETs
2003 · Jin‐Ping Han, Eric M. Vogel, et al. · 13
Impact of Phase-Change Memory Drift on Energy Efficiency and Accuracy of Analog Compute-in-Memory Deep Learning Inference (Invited)
2023 · Martin M. Frank, Ning Li, et al. · IEEE International Reliability Physics Symposium proceedings · 9
Works count: 56
Citation count: 2,321
H-index: 19
I10-index: 24
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