Work

Asymmetric Energy Distribution of Interface Traps in n- and p-MOSFETs With $hbox HfO _2$ Gate Dielectric on Ultrathin SiON Buffer Layer

Year: 2004

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2004.824247

Authors: J.-P. Han, E.M. Vogel, E.P. Gusev, C. D'Emic, C.A. Richter, D.W. Heh, J.S. Suehle

Institutions: National Institute of Standards and Technology, IBM (United States), IBM Research - Thomas J. Watson Research Center

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2120201770

FWCI: 6.332

Cites: 18

Cited by: 38

Related to: 10