Work

Energy Distribution of Interface Traps in High-K Gated MOSFETs

Year: 2003

Type: article

Authors: Jin‐Ping Han, Eric M. Vogel, Evgeni Gusev, C. D’Emic, Curt A. Richter, Dawei Heh, John S. Suehle

Institutions: National Institute of Standards and Technology, IBM (United States), IBM Research - Thomas J. Watson Research Center

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W3088972467

FWCI: 1.323

Cites:

Cited by: 13

Related to: 10