Work

Performance study of Ballistic and Quasi-Ballistic on Double-Gate MOSFETs 6T SRAM cell

Year: 2009

Type: article

Source: TechConnect Briefs

Authors: Autran J-L, Jaud M-A, G. Le Carval, S. Martinie, D. Munteanu, Olivier Thomas

Institution: Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2184345749

FWCI:

Cites: 6

Cited by:

Related to: 10