Work

Seebeck Coefficient of Ge-on-Insulator Layers Fabricated by Direct Wafer Bonding Process

Year: 2015

Type: article

Abstract: We investigate thermoelectric characteristics of SiGe nanostructures for realizing high-sensitive infrared photodetector applications. In this paper, for future Ge and SiGe nanowires, we fabricate p-type Ge-on-insulator (GOI) substrates by a direct wafer bonding process. We discuss the annealing effect on the GOI substrate in the process and measure its Seebeck coefficient in the temperature range of 290-350 K. The Seebeck coefficient of the GOI layers is almost identical with the reported values for Ge. This result confirms that the measured Seebeck coefficient of GOI layers is not influenced by the buried oxide (BOX) layer and the Si substrate.

Source: Advanced materials research

DOI: 10.4028/www.scientific.net/amr.1117.94