Gate-first high-k/metal gate DRAM technology for low power and high performance products
Year: 2015
Type: conference-paper
Authors: Minchul Sung, Se-Aug Jang, Hyunjin Lee, Yun-Hyuck Ji, Jae-Il Kang, Tae-O Jung, Tae-Hang Ahn, Yun-Ik Son, Hyung-Chul Kim, Sun-Woo Lee, Seung-Mi Lee, Jung-Hak Lee, Seung-Beom Baek, Eun-Hyup Doh, Heung-Jae Cho, Tae-Young Jang, Il-Sik Jang, Jae-Hwan Han, Kyung-Bo Ko, Yu-Jun Lee, Su-Bum Shin, Jae-Seon Yu, Sung-Hyuk Cho, Ji-Hye Han, Dong-Kyun Kang, Jinsung Kim, Jae-Sang Lee, Keun-Do Ban, Seung-Jin Yeom, Hyun-Wook Nam, Dong-Kyu Lee, Mun-Mo Jeong, Byungil Kwak, Jeongsoo Park, Kisik Choi, Sung-Kye Park, Noh-Jung Kwak, Sung-Joo Hong
Institutions: SK Group (United States), SK Hynix (South Korea)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2289750143