Work

Effect of Dopant Concentration on High Voltage 4H-SiC Schottky Diodes

Year: 2006

Type: article

Source: MRS Proceedings

DOI: 10.1557/proc-0911-b10-02

Authors: Francesco La Via, Giuseppa Galvagno, Andrea Firrincieli, Salvatore Di Franco, Andrea Severino, Stefano Leone, Marco Mauceri, Giuseppe Pistone, Giuseppe Abbondanza, Ferdinando Portuese, Lucia Calcagno, Gaetano Foti

Institutions: Institute for Microelectronics and Microsystems, University of Catania

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2313326342

FWCI:

Cites: 5

Cited by: 4

Related to: 10