Work

4H-SiC Power MOSFETs and SBDs of 1.7kV Rating

Year: 2008

Type: conference-paper

Source: International Conference on Solid State Devices and Materials (SSDM)

DOI: 10.7567/ssdm.2008.g-7-2

Authors: N. Miura, S. Yoshida, Y. Nakao, Y. Matsuno, K. Kuroda, M. Imaizumi, H. Sumitani, H. Yamamoto, T. Oomori

Institution: Mitsubishi Electric (Japan)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2441491384

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