Work

A Model of Electric Field Distribution in Gate Oxide and JFET-Region of 4H-SiC DMOSFETs

Year: 2016

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2016.2584218

Authors: Luigi Di Benedetto, Gian Domenico Licciardo, Tobias Erlbacher, Anton J. Bauer, Rosalba Liguori, Alfredo Rubino

Institutions: University of Salerno, Fraunhofer Institute for Integrated Systems and Device Technology

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Ministero dell’Istruzione, dell’Università e della Ricerca

OpenAlex ID: W2463374179

FWCI: 1.981

Cites: 14

Cited by: 39

Related to: 10