Enhanced In incorporation in full InGaN heterostructure grown on relaxed InGaN pseudo-substrate
Year: 2017
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.4989998
Authors: A. Even, G. Laval, O. Ledoux, P. Ferret, D. Sotta, E. Guiot, F. Levy, I. C. Robin, A. Dussaigne
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2628359049