Work

Total ionizing dose effects in passivated and unpassivated AlGaN/GaN HEMTs

Year: 2016

Type: conference-paper

Source: European Conference on Radiation and Its Effects on Components and Systems

DOI: 10.1109/radecs.2016.8093099

Authors: Rong Jiang, En Xia Zhang, Xiao Shen, Jin Chen, Kai Ni, Pan Wang, Daniel M. Fleetwood, Ronald D. Schrimpf, Stephen W. Kaun, Erin C. H. Kyle, James S. Speck, Sokrates T. Pantelides

Institutions: Vanderbilt University, University of Memphis, University of California, Santa Barbara

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Energy Research Scientific Computing Center, Defense Threat Reduction Agency

OpenAlex ID: W2768105855

FWCI: 0.786

Cites: 12

Cited by: 8

Related to: 10