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Erin C. H. Kyle

High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy
2014 · Erin C. H. Kyle, Stephen W. Kaun, et al. · Journal of Applied Physics · 136
Proton-Induced Dehydrogenation of Defects in AlGaN/GaN HEMTs
2013 · Jin Chen, Yevgeniy S. Puzyrev, et al. · IEEE Transactions on Nuclear Science · 112
Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures
2012 · Stephen W. Kaun, Peter G. Burke, et al. · Applied Physics Letters · 85
Worst-Case Bias for Proton and 10-keV X-Ray Irradiation of AlGaN/GaN HEMTs
2016 · Rong Jiang, En Xia Zhang, et al. · IEEE Transactions on Nuclear Science · 77
Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs
2018 · Rong Jiang, Xiao Shen, et al. · IEEE Transactions on Device and Materials Reliability · 70
GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy
2014 · Stephen W Kaun, Elaheh Ahmadi, et al. · Semiconductor Science and Technology · 50
Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy
2015 · Z. Zhang, A. R. Arehart, et al. · Applied Physics Letters · 45
Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures
2016 · Z. Zhang, D. Cardwell, et al. · Journal of Applied Physics · 43
Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN
2015 · Erin C. H. Kyle, Stephen W. Kaun, et al. · Applied Physics Letters · 42
High-Field Stress, Low-Frequency Noise, and Long-Term Reliability of AlGaN/GaN HEMTs
2016 · Jin Chen, Yevgeniy S. Puzyrev, et al. · IEEE Transactions on Device and Materials Reliability · 37
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Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN
2015 · Z. Zhang, E. Farzana, et al. · Journal of Applied Physics · 35
Pure AlN layers in metal-polar AlGaN/AlN/GaN and AlN/GaN heterostructures grown by low-temperature ammonia-based molecular beam epitaxy
2015 · Stephen W Kaun, Baishakhi Mazumder, et al. · Semiconductor Science and Technology · 34
Degradation and annealing effects caused by oxygen in AlGaN/GaN high electron mobility transistors
2016 · R. Jiang, X. Shen, et al. · Applied Physics Letters · 29
RF Performance of Proton-Irradiated AlGaN/GaN HEMTs
2014 · Jin Chen, En Xia Zhang, et al. · IEEE Transactions on Nuclear Science · 29
High indium content homogenous InAlN layers grown by plasma-assisted molecular beam epitaxy
2016 · Erin C.H. Kyle, Stephen W. Kaun, et al. · Journal of Crystal Growth · 10
Band gap bowing for high In content InAlN films
2019 · Richard C. Cramer, Erin C. H. Kyle, et al. · Journal of Applied Physics · 9
Total ionizing dose effects in passivated and unpassivated AlGaN/GaN HEMTs
2016 · Rong Jiang, En Xia Zhang, et al. · European Conference on Radiation and Its Effects on Components and Systems · 8
Erratum to “High indium content homogenous InAlN layers grown by plasma assisted molecular beam epitaxy” [J. Cryst. Growth 454 (2016) 164–172]
2018 · Erin C.H. Kyle, Stephen W. Kaun, et al. · Journal of Crystal Growth
Works count: 19
Citation count: 851
H-index: 14
I10-index: 15
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