Work

Pure AlN layers in metal-polar AlGaN/AlN/GaN and AlN/GaN heterostructures grown by low-temperature ammonia-based molecular beam epitaxy

Year: 2015

Type: article

Source: Semiconductor Science and Technology

DOI: 10.1088/0268-1242/30/5/055010

Authors: Stephen W Kaun, Baishakhi Mazumder, Micha N Fireman, Erin C H Kyle, Umesh K Mishra, James S Speck

Institutions: University of California, Santa Barbara, University of California System

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Foundation, University of California, Santa Barbara, Materials Research Science and Engineering Center, Harvard University, Office of Naval Research

OpenAlex ID: W2005915232

FWCI: 2.587

Cites: 30

Cited by: 34

Related to: 10