Work

Effect of alpha-particle irradiation dose on SiNx/AlGaN/GaN metal–insulator semiconductor high electron mobility transistors

Year: 2018

Type: article

Source: Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

DOI: 10.1116/1.5042261

Authors: Chaker Fares, Fan Ren, Stephen J. Pearton, Gwangseok Yang, Jihyun Kim, Chien-Fong Lo, J. Wayne Johnson

Institutions: University of Florida, Korea University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: U.S. Department of Defense, Australian Government, Korea University, Ministry of Trade, Industry and Energy, Korea Institute of Energy Research, Defense Threat Reduction Agency

Awards: G1387318426, G2470600771, G5726327632

OpenAlex ID: W2814384156

FWCI: 0.419

Cites: 39

Cited by: 9

Related to: 10