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Chien-Fong Lo

Thermal Boundary Resistance in GaN Films Measured by Time Domain Thermoreflectance with Robust Monte Carlo Uncertainty Estimation
2016 · Thomas L. Bougher, Luke Yates, et al. · Nanoscale and Microscale Thermophysical Engineering · 92
Degradation Mechanisms for GaN and GaAs High Speed Transistors
2012 · David Cheney, Erica Douglas, et al. · Materials · 59
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Electric-Field-Driven Degradation in off-State Step-Stressed AlGaN/GaN High-Electron Mobility Transistors
2011 · Chih-Yang Chang, E. A. Douglas, et al. · IEEE Transactions on Device and Materials Reliability · 45
Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors
2013 · Lu Liu, Chien-Fong Lo, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 38
Thermal Performance of GaN/Si HEMTs Using Near-Bandgap Thermoreflectance Imaging
2020 · Georges Pavlidis, Luke Yates, et al. · IEEE Transactions on Electron Devices · 37
Effects of proton irradiation energies on degradation of AlGaN/GaN high electron mobility transistors
2012 · Hong-Yeol Kim, Jihyun Kim, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 33
Effect of electron irradiation on AlGaN/GaN and InAlN/GaN heterojunctions
2013 · Ya-Shi Hwang, Lu Liu, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 31
ZnO, GaN, and InN Functionalized Nanowires for Sensing and Photonics Applications
2010 · S. J. Pearton, C. Y. Chang, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 27
Reverse gate bias-induced degradation of AlGaN/GaN high electron mobility transistors
2010 · Chih-Yang Chang, Travis Anderson, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 26
Effect of temperature on CO sensing response in air ambient by using ZnO nanorod-gated AlGaN/GaN high electron mobility transistors
2012 · Chien-Fong Lo, Yuyin Xi, et al. · Sensors and Actuators B Chemical · 23
Improvement of Off-State Stress Critical Voltage by Using Pt-Gated AlGaN/GaN High Electron Mobility Transistors
2011 · Chien-Fong Lo, Lu Liu, et al. · Electrochemical and Solid-State Letters · 23
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Effect of proton irradiation energy on SiNx/AlGaN/GaN metal-insulator semiconductor high electron mobility transistors
2018 · Chaker Fares, Fan Ren, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 20
Low-Loss Coplanar Waveguides on GaN-on-Si Substrates
2018 · Lina Cao, Chien-Fong Lo, et al. · IEEE Microwave and Wireless Components Letters · 19
Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability
2012 · Lu Liu, Chien-Fong Lo, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 17
Electrical characterization of 60Co gamma radiation-exposed InAlN/GaN high electron mobility transistors
2013 · Hong-Yeol Kim, Jihyun Kim, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 15
Effect of buffer layer structure on electrical and structural properties of AlGaN/GaN high electron mobility transistors
2011 · Chien-Fong Lo, L. Liu, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 15
Effect of temperature on CO detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors
2011 · Chien-Fong Lo, B. H. Chu, et al. · Applied Physics Letters · 14
Trapping Phenomena in InAlN/GaN High Electron Mobility Transistors
2018 · A. Y. Polyakov, N. B. Smirnov, et al. · ECS Journal of Solid State Science and Technology · 11
Effects of 2 MeV Ge+ irradiation on AlGaN/GaN high electron mobility transistors
2013 · Erica A. Douglas, Edward Bielejec, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 11
Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors
2012 · Chien-Fong Lo, Lu Liu, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 10
Effects of silicon nitride passivation on isolation-blocking voltage in algan/gan high electron mobility transistors
2011 · Chien-Fong Lo, T. S. Kang, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 10
Effect of alpha-particle irradiation dose on SiNx/AlGaN/GaN metal–insulator semiconductor high electron mobility transistors
2018 · Chaker Fares, Fan Ren, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 9
Carbon monoxide detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors in different temperature environments
2011 · Chien-Fong Lo, Lu Liu, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 9
Coplanar waveguide performance comparison of GaN-on-Si and GaN-on-SiC substrates
2017 · Lina Cao, Chien-Fong Lo, et al. · Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium · 8
High breakdown voltage in AlN/GaN metal–insulator–semiconductor high-electron-mobility transistors
2014 · Ya-Hsi Hwang, Shihyun Ahn, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 7
Works count: 50
Citation count: 670
H-index: 15
I10-index: 21
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