Work

Electric-Field-Driven Degradation in off-State Step-Stressed AlGaN/GaN High-Electron Mobility Transistors

Year: 2011

Type: article

Source: IEEE Transactions on Device and Materials Reliability

DOI: 10.1109/tdmr.2010.2103314

Authors: Chih-Yang Chang, E. A. Douglas, Jinhyung Kim, Liu Lu, Chien-Fong Lo, Byung-Hwan Chu, D. J. Cheney, B. P. Gila, F. Ren, G. D. Via, David A. Cullen, Lin Zhou, David J. Smith, Soohwan Jang, S. J. Pearton

Institutions: University of Florida, Dankook University, United States Air Force Research Laboratory, Arizona State University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2158688804

FWCI: 4.696

Cites: 20

Cited by: 45

Related to: 10