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Glen David Via

Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices
2007 · Gregg H. Jessen, Robert C. Fitch, et al. · IEEE Transactions on Electron Devices · 361
High-Power Ka-Band Performance of AlInN/GaN HEMT With 9.8-nm-Thin Barrier
2009 · A. Crespo, M.M. Bellot, et al. · IEEE Electron Device Letters · 114
Low-Temperature Bonded GaN-on-Diamond HEMTs With 11 W/mm Output Power at 10 GHz
2015 · Pane-Chane Chao, Kenneth Chu, et al. · IEEE Transactions on Electron Devices · 113
Wet Chemical Digital Etching of GaAs at Room Temperature
1996 · Gregory C. DeSalvo, Christopher A. Bozada, et al. · Journal of The Electrochemical Society · 99
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Thermal Properties of AlGaN/GaN HFETs on Bulk GaN Substrates
2012 · N. Killat, M. Montes, et al. · IEEE Electron Device Letters · 70
Implementation of High-Power-Density $X$ -Band AlGaN/GaN High Electron Mobility Transistors in a Millimeter-Wave Monolithic Microwave Integrated Circuit Process
2015 · Robert C. Fitch, Dennis E. Walker, et al. · IEEE Electron Device Letters · 69
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Full-Wafer Characterization of AlGaN/GaN HEMTs on Free-Standing CVD Diamond Substrates
2009 · K.D. Chabak, J.K. Gillespie, et al. · IEEE Electron Device Letters · 69
AlGaN/GaN HEMT on Diamond Technology Demonstration
2006 · G. Jessen, J. Gillespie, et al. · Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium · 68
Direct observation of 0.57eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors
2012 · A.R. Arehart, A. Sasikumar, et al. · Solid-State Electronics · 64
A Decomposition Workflow for Integrated Circuit Verification and Validation
2020 · Adam Kimura, Jon Scholl, et al. · Journal of Hardware and Systems Security · 49
Effects of Sc2O3 and MgO passivation layers on the output power of AlGaN/GaN HEMTs
2002 · J.K. Gillespie, R.C. Fitch, et al. · IEEE Electron Device Letters · 48
Spatially-discriminating trap characterization methods for HEMTs and their application to RF-stressed AlGaN/GaN HEMTs
2010 · A. R. Arehart, A. Sasikumar, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 47
Electric-Field-Driven Degradation in off-State Step-Stressed AlGaN/GaN High-Electron Mobility Transistors
2011 · Chih-Yang Chang, E. A. Douglas, et al. · IEEE Transactions on Device and Materials Reliability · 45
Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors
2013 · Lu Liu, Chien-Fong Lo, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 38
AlGaN/GaN High Electron Mobility Transistor degradation under on- and off-state stress
2010 · E.A. Douglas, C.Y. Chang, et al. · Microelectronics Reliability · 38
Electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors
2003 · B. Luo, Jihyun Kim, et al. · Applied Physics Letters · 37
Wafer‐scale GaN HEMT performance enhancement by diamond substrate integration
2014 · G. D. Via, J. G. Felbinger, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 36
Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors
2011 · E.A. Douglas, C.Y. Chang, et al. · Microelectronics Reliability · 36
GaN-on-Diamond HEMTs with 11W/mm Output Power at 10GHz
2016 · P. C. Chao, Kanin Chu, et al. · MRS Advances · 35
RF Power Measurements of InAlN/GaN Unstrained HEMTs on SiC Substrates at 10 GHz
2007 · G. H. Jessen, J. K. Gillespie, et al. · IEEE Electron Device Letters · 34
AlInN HEMT grown on SiC by metalorganic vapor phase epitaxy for millimeter‐wave applications
2010 · Shiping Guo, Xiang Gao, et al. · physica status solidi (a) · 31
Proton irradiation of MgO- or Sc2O3 passivated AlGaN/GaN high electron mobility transistors
2003 · B. Luo, F. Ren, et al. · Solid-State Electronics · 30
Strained AlInN/GaN HEMTs on SiC With 2.1-A/mm Output Current and 104-GHz Cutoff Frequency
2010 · Kelson D Chabak, Manuel Trejo, et al. · IEEE Electron Device Letters · 29
Improvement of GaN-based laser diode facets by FIBpolishing
1998 · M.P. Mack, G.D. Via, et al. · Electronics Letters · 29
Reverse gate bias-induced degradation of AlGaN/GaN high electron mobility transistors
2010 · Chih-Yang Chang, Travis Anderson, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 26
Works count: 78
Citation count: 2,009
H-index: 25
I10-index: 44
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