Work

Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors

Year: 2011

Type: article

Source: Microelectronics Reliability

DOI: 10.1016/j.microrel.2011.09.018

Authors: E.A. Douglas, C.Y. Chang, B.P. Gila, M.R. Holzworth, K.S. Jones, L. Liu, Jinhyung Kim, Soohwan Jang, G.D. Via, F. Ren, S.J. Pearton

Institutions: University of Florida, Dankook University, United States Air Force Research Laboratory, Wright-Patterson Air Force Base, Wright Laboratory

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Multidisciplinary University Research Initiative, Air Force Office of Scientific Research

OpenAlex ID: W2033101951

FWCI: 3.251

Cites: 38

Cited by: 36

Related to: 10