Work

Effect of proton irradiation energy on SiNx/AlGaN/GaN metal-insulator semiconductor high electron mobility transistors

Year: 2018

Type: article

Source: Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

DOI: 10.1116/1.5049596

Authors: Chaker Fares, Fan Ren, Stephen J. Pearton, Gwangseok Yang, Jihyun Kim, Chien-Fong Lo, J. Wayne Johnson

Institutions: Korea University, University of Florida

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Australian Government, Ministry of Trade, Industry and Energy, Defense Threat Reduction Agency

Awards: G1387318426, G171012347, G5726327632

OpenAlex ID: W2890588001

FWCI: 1.258

Cites: 38

Cited by: 20

Related to: 10