Thermoelectric (Ba x Sr 1– x )Si 2 films prepared by sputtering method over the barium solubility limit
Year: 2019
Type: article
Abstract: In this work, (Ba x Sr 1– x )Si 2 thin films were prepared by the co-sputtering method at various deposition temperatures. The constituent phase of the films primarily depended on the deposition temperature and the composition x . The composition to make a solid solution was expanded by lowering the deposition temperature, compared to that of bulk-sintered bodies. Further lowering the deposition temperature produced a metastable phase, which was a layered structure (trigonal, EuGe 2 -type structure), with a low thermoelectric power factor. Substitution with Ba led to an increase in the temperature showing the highest power factor. The samples with Ba concentrations over 17% showed the maximum power factor around room temperature.
Institutions: Tokyo Institute of Technology, Tosoh (Japan)
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2995343981