Work

Generalized Constant Current Method for Determining MOSFET Threshold Voltage

Year: 2020

Type: article

Abstract: A novel method for extracting threshold voltage and substrate effect parameters of MOSFETs with constant current bias at all levels of inversion is presented. This generalized constant-current (GCC) method exploits the charge-based model of MOSFETs to extract threshold voltage and other substrate-effect-related parameters. The method is applicable over a wide range of current throughout weak and moderate inversion, and to some extent in strong inversion. This method is particularly useful when applied for MOSFETs presenting edge conduction effect (subthreshold hump) in CMOS processes using shallow trench isolation (STI).

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2020.3019019

Authors: Matthias Bucher, Nikolaos Makris, Loukas Chevas

Institution: Technical University of Crete

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W3046916681

FWCI: 1.098

Cites: 15

Cited by: 26

Related to: 10