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How silicon and boron dopants govern the cryogenic scintillation properties of N-type GaAs

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Year: 2020
Type: article
Source: Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment
DOI: 10.1016/j.nima.2020.164957
Authors: S. Derenzo, E. Bourret, C. Frank-Rotsch, S. Hanrahan, M. Garcia-Sciveres
Institutions: Lawrence Berkeley National Laboratory, Leibniz Institute for Crystal Growth
Language: English

Topic: Radiation Detection and Scintillator Technologies
Subfield: Radiation
Field: Physics and Astronomy
Domain: Physical Sciences

Open Access status: bronze

Funders: U.S. Department of Energy, U.S. Department of Homeland Security, High Energy Physics, Lawrence Berkeley National Laboratory
Awards: G1079818582, G1143651532, G1146855974, G124228508, G1286236842, G2218322106, G3083819904, G42916606, G5181991913, G5929919077, G7354628648, G759921648, G969889393
OpenAlex ID: W3111427856
FWCI: 1.203
Cites: 23
Cited by: 8
Related to: 10
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