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How silicon and boron dopants govern the cryogenic scintillation properties of N-type GaAs
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Year:
2020
Type:
article
Source:
Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment
DOI:
10.1016/j.nima.2020.164957
Authors:
S. Derenzo,
E. Bourret,
C. Frank-Rotsch,
S. Hanrahan,
M. Garcia-Sciveres
Institutions:
Lawrence Berkeley National Laboratory,
Leibniz Institute for Crystal Growth
Language:
English
Topic:
Radiation Detection and Scintillator Technologies
Subfield:
Radiation
Field:
Physics and Astronomy
Domain:
Physical Sciences
Open Access status:
bronze
Funders:
U.S. Department of Energy,
U.S. Department of Homeland Security,
High Energy Physics,
Lawrence Berkeley National Laboratory
Awards:
G1079818582,
G1143651532,
G1146855974,
G124228508,
G1286236842,
G2218322106,
G3083819904,
G42916606,
G5181991913,
G5929919077,
G7354628648,
G759921648,
G969889393
show all 13
OpenAlex ID:
W3111427856
FWCI:
1.203
Cites:
23
Cited by:
8
Related to:
10