Work

1.7 kV High-Current SiC Power Module Based on Multi-Level Substrate Concept and Exploiting MOSFET Body Diode during Operation

Year: 2017

Type: article

Authors: Slavo Kicin, Stanislav Skibin, Christof Bernhard, Enea Bianda, Francisco Canales, Samuel Hartmann, Fabian Fischer, Pauline Morin, R. Gade

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W3164761595

FWCI: 0.559

Cites:

Cited by: 7

Related to: 10