Work

Impact of Gate and Drain Distance on Device Characteristics in InAlGaN/GaN High Electron Mobility Transistors

Year: 2024

Type: article

Abstract: Ilgyu Choi∗, Sung-Jae Chang, Dohyun Kim, Jong-Won Lim, Dong-Min Kang, Hyun-Wook Jung, and Ho-Kyun Ahn. Applied Science and Convergence Technology 2024;33:144-7. https://doi.org/10.5757/ASCT.2024.33.5.144

Source: Applied Science and Convergence Technology

DOI: 10.5757/asct.2024.33.5.144

Authors: Ilgyu Choi, Sung-Jae Chang, Dohyun Kim, Jong-Won Lim, Dong-Min Kang, Hyun-Wook Jung, Ho-Kyun Ahn

Institution: Electronics and Telecommunications Research Institute

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: diamond

Funders: Agency for Defense Development, Defense Acquisition Program Administration

Awards: G355748297, G4510921525

OpenAlex ID: W4403171656

FWCI: 1.013

Cites: 29

Cited by: 7

Related to: 10