Work

Investigation of In Situ NH3 and N2O Plasma Treatment on AlGaN/GaN High Electron Mobility Transistors

Year: 2024

Type: article

Abstract: Plasma pre-treatment using NH 3 and N 2 O gases was conducted prior to deposition of a SiN passivation layer to compare and analyze the impact of each plasma gas on the device characteristics of AlGaN/GaN high electron mobility transistors (HEMTs).Surface analyses were performed through atomic force microscopy, X-ray photoelectron spectroscopy (XPS), and transmission electron microscopy.A systematic investigation confirmed improvements in surface quality, with the most significant enhancement observed after NH 3 plasma treatment.In particular, XPS analysis provided insights into these improvements, highlighting the effective oxide removal capability of NH 3 plasma.Additionally, direct current and frequency dispersion analyses through capacitance measurements confirmed that the device characteristics were enhanced after plasma treatment.The plasma treatment using NH 3 gas thus was very effective for improving the surface quality in AlGaN/GaN HEMTs.

Source: Applied Science and Convergence Technology

DOI: 10.5757/asct.2024.33.5.152

Authors: Dohyun Kim, Hyun-Wook Jung, Sung-Jae Chang, Il-Gyu Choi, Ho-Kyun Ahn, Hyun Seok Lee

Institutions: Electronics and Telecommunications Research Institute, Chungbuk National University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: diamond

Funders: Agency for Defense Development, Defense Acquisition Program Administration

Awards: G355748297, G4510921525