Work

Ultraviolet Optoelectronic Synapse Based on AlScN/p‐i‐n GaN Heterojunction for Advanced Artificial Vision Systems

Year: 2025

Type: article

Source: Advanced Materials

DOI: 10.1002/adma.202419316

Authors: Zhiwei Xie, Ke Jiang, Shanli Zhang, Zhongqiang Wang, Xuanyu Shan, Bingxiang Wang, Jianwei Ben, Mingrui Liu, Shunpeng Lv, Yang Chen, Yuping Jia, Xiaojuan Sun, Dabing Li

Institutions: Chinese Academy of Sciences, Changchun Institute of Optics, Fine Mechanics and Physics, University of Chinese Academy of Sciences, Northeast Normal University

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Natural Science Foundation of Jilin Province, National Natural Science Foundation of China, National Key Research and Development Program of China

Awards: G1584368417, G2176408726, G2291484333, G4325260170, G5063899986, G762520077

OpenAlex ID: W4408884384

FWCI: 10.85

Cites: 63

Cited by: 47

Related to: 10