Work

Al-Doped HZO: A BEoL compatible Ferroelectric Material for Automotive-Grade Memory

Year: 2025

Type: conference-paper

Source: IEEE International Memory Workshop (IMW)

DOI: 10.1109/imw61990.2025.11026934

Authors: David Lehninger, Ayse Sünbül, Hannes Mähne, Thomas Kämpfe, Alison Viegas, Justine Barbot, Kerstin Bernert, Steffen Thiem, Konrad Seidel, Maximilian Lederer

Institutions: Fraunhofer Institute for Photonic Microsystems, Center Nanoelectronic Technologies, X-Fab (Germany)

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4411233435

FWCI: 7.075

Cites: 16

Cited by: 3

Related to: 10