Work

Generalized A(n)BC Recombination Model in Semiconductors with Multilevel Defects

Year: 2025

Type: article

Source: Journal of the American Chemical Society

DOI: 10.1021/jacs.5c13336

Authors: Shanshan Wang, Menglin Huang, Su-Huai Wei, Xin-Gao Gong, Shiyou Chen

Institutions: Fudan University, Eastern Institute of Technology, Eastern Institute of Technology, Ningbo

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, China Postdoctoral Science Foundation, Science and Technology Commission of Shanghai Municipality, National Postdoctoral Program for Innovative Talents, National Key Research and Development Program of China

Awards: G1180831481, G19089914, G2311051007, G236677733, G2570175261, G478219560, G6348750511, G6450171021, G8425566183

OpenAlex ID: W4414495266

FWCI: 1.86

Cites: 63

Cited by: 6

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