Work

Temperature-Dependent Detrapping Behavior of p-/n-Type Ferroelectric FETs With Si/SiGe Channel

Year: 2025

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2025.3625193

Authors: S. Yang, F. Müller, Y. Raffel, N. Yadav, R. Hoffmann, F. Schöne, D. Lehninger, T. Kämpfe, K. Seidel, H. Mulaosmanovic, D. Kleimaier, S. Dünkel, S. Beyer, M. Lederer, G. Gerlach

Institutions: Fraunhofer Institute for Photonic Microsystems, Center Nanoelectronic Technologies, GlobalFoundries (Germany), Technische Universität Dresden

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Bundesministerium für Bildung und Forschung

OpenAlex ID: W4415593779

FWCI: 0.227

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Cited by: 1

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