Work

Enabling Energy-Efficient and High-Density eDRAM-LUT-Based Computing-in-Memory Using Anti-Ferroelectric Transistors

Year: 2025

Type: conference-paper

DOI: 10.1109/esserc66193.2025.11214025

Authors: Hongtao Zhong, Zijie Zheng, Zhonghao Chen, Taixin Li, Zuopu Zhou, Leming Jiao, Xiaoyang Ma, Hongyang Jia, Huazhong Yang, Chen Jiang, Thomas Kämpfe, Kai Ni, Xiao Gong, Xueqing Li

Institutions: Tsinghua University, National University of Singapore, Princeton University, Fraunhofer Institute for Photonic Microsystems, University of Notre Dame

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G5310762714

OpenAlex ID: W4415934265

FWCI:

Cites: 6

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