Growth of tetragonal PtO by molecular-beam epitaxy and its integration into β-Ga2O3 Schottky diodes
Year: 2025
Type: article
Abstract: We demonstrate the epitaxial growth of tetragonal platinum monoxide (PtO) on MgO, TiO2, and β-Ga2O3 single-crystalline substrates by ozone molecular-beam epitaxy. We provide synthesis routes and derive a growth diagram under which PtO films can be synthesized by physical vapor deposition. A combination of electrical transport and photoemission spectroscopy measurements, in conjunction with density functional theory calculations, reveal PtO to be a degenerately doped p-type semiconductor with a bandgap of Eg ≈ 1.6 eV. Spectroscopic ellipsometry measurements are used to extract the complex dielectric function spectra, indicating a transition from free-carrier absorption to higher photon energy transitions at E ≈ 1.6 eV. Using tetragonal PtO as an anode contact, we fabricate prototype Schottky diodes on n-type Sn-doped β-Ga2O3 substrates and extract Schottky barrier heights of ϕB > 2.2 eV.
Source: APL Materials
DOI: 10.1063/5.0274229
Authors: Felix V. E. Hensling, Christopher T. Parzyck, Bennett Cromer, Md. Abdullah Al Mamun, Y. Eren Suyolcu, L. Kalaydjian, Indra Subedi, Jisung Park, Kathy Azizie, Qi Song, Peter A. van Aken, Nikolas J. Podraza, Kyeongjae Cho, Debdeep Jena, Huili G. Xing, Kyle M. Shen, Darrell G. Schlom, Patrick Vogt
Language: English
Topic: Ga2O3 and related materials
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,200
Awards: G1205195086, G1321126357, G1523888516, G2264468429, G2414013413, G2415270547, G2879337545, G3447017740, Cornell Center for Materials Research - MRSEC, G4303070870, G5917061246, G6351810044, G6568212763, NNCI: Cornell NanoScale Science and Technology Facility (CNF), G7767248047, MIP: Platform for the Accelerated Realization, Analysis, and Discovery of Interface Materials (PARADIM), G8289759875
OpenAlex ID: W4416189153