Comparison of different X‐ray‐based scanning electron microscopy methods to detect sub‐nanometre ultra‐thin InAs layers deposited on top of GaAs
Year: 2025
Type: article
Abstract: We compare three different methods of X-ray analysis in a scanning electron microscope (SEM): energy-dispersive X-ray spectroscopy (EDX), wavelength-dispersive X-ray spectroscopy (WDX) and micro X-ray fluorescence (μXRF). These methods are all applied to the same gallium arsenide (GaAs) wafer with a 0.8 nm layer of indium arsenide (InAs) on top. All methods allow detection and quantification of the indium L-line intensity from the thin InAs layer. EDX is the easiest to perform, WDX is the most sensitive and μXRF a novel technique where a poly-capillary optics is used to focus an X-ray beam from a high-voltage X-ray tube onto a small spot several micrometres wide and the characteristic X-rays produced are detected by a solid-state silicon detector similar to that used in EDX. It is to our knowledge the first time a sub-nanometre layer is reliably detected and analysed using μXRF in an SEM.
Source: Journal of Microscopy
DOI: 10.1111/jmi.70049
Authors: Thomas Walther, Stuart Creasey‐Gray, Stephan Boehm, Heath Young, Yang Yang
Institutions: University of Sheffield, Bruker (Germany)
Language: English
Subfield: Surfaces, Coatings and Films
Field: Materials Science
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $4,760
OpenAlex ID: W4416624875