Work

Al composition dependence of band alignment in NiO/(AlxGa1−x)2O3 heterojunctions

Year: 2025

Type: article

Source: Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

DOI: 10.1116/6.0005029

Authors: Hsiao-Hsuan Wan, Fan Ren, Ta-Shun Chou, Saud Bin Anooz, Stephen J. Pearton

Institutions: University of Florida, Leibniz Institute for Crystal Growth

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

Funders: Deutsche Forschungsgemeinschaft, Defense Threat Reduction Agency, European Regional Development Fund

Awards: G4624511994, G536033752, G772299097

OpenAlex ID: W4416863754

FWCI:

Cites: 50

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