Controlling two-dimensional electron gas density through surface states in ultra-thin-barrier AlGaN/GaN heterostructures
Year: 2025
Type: article
Source: Applied Physics Letters
DOI: 10.1063/5.0308777
Institutions: Nagoya Institute of Technology, Mitsubishi Electric (Japan)
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W7116879740