Work

Spiers Memorial Lecture: Emerging semiconductors viewed through the lens of a scanning electron microscope

Year: 2026

Type: article

Abstract: As new materials are developed, or as their applications develop, it is important to have a range of characterisation techniques to understand their properties with a view to improving their performance. This paper considers a suite of characterisation techniques based on scanning electron microscopy to study emerging semiconductors or semiconductors with emerging applications, with an emphasis on combining multiple different techniques ideally measured simultaneously. Cathodoluminescence (CL) hyperspectral imaging is used to assess the optical properties and wavelength dispersive X-ray (WDX) provides compositional information, with an electron probe microanalyser facilitating their combined use. Electron channeling contrast imaging (ECCI) and electron backscatter diffraction (EBSD) furnish structural information, and electron beam induced current (EBIC) gives electrical information. The techniques are introduced using examples from the III-nitride semiconductors, followed by examples of scanning electron beam investigations of perovskite solar absorber layers, UV-emitting aluminium gallium nitride structures and 2D materials.

Source: Faraday Discussions

DOI: 10.1039/d6fd00115g

Author: Robert W. Martin

Institution: University of Strathclyde

Language: English

Topic: Electron and X-Ray Spectroscopy Techniques

Subfield: Surfaces, Coatings and Films

Field: Materials Science

Domain: Physical Sciences

Open Access status: hybrid

Funders: Royal Society of Chemistry, Engineering and Physical Sciences Research Council

Awards: University of Strathclyde - Equipment Account", Nanoanalysis for Advanced Materials and Healthcare