Work

Epitaxial growth of strain-relaxed GeSn alloys on Si utilizing Sn-composition-graded buffer layer for mid-infrared photodetectors

Year: 2026

Type: article

Source: Optical Materials

DOI: 10.1016/j.optmat.2026.118509

Authors: Kuo-Chih Lee, Ping-Chien Hsieh, Yue-Tong Jheng, Radhika Bansal, Yu Cheng, Yoshishige Tsuchiya, Jun-Yu Ou, Xin Zhou, Pavels Onufrijevs, Alexander Fedorchenko, H.H. Cheng, Guo-En Chang

Institutions: National Yang Ming Chiao Tung University, National Taiwan University, National Chung Cheng University, University of Southampton, Centre National de la Recherche Scientifique, Institut d'Electronique, de Microélectronique et de Nanotechnologie, Riga Technical University, Czech Academy of Sciences, Institute of Thermomechanics

Language: English

Topic: Advanced Semiconductor Detectors and Materials

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

Funders: National Science and Technology Council, CHIST-ERA

Awards: G3384318093, Electrically-Driven Programable Silicon Platform for Next-Generation Optical Computing( I ), Coupling Technolgies for Co-Packaged Optics, G66783112, G7996096169, G9000365962, G9000366034

OpenAlex ID: W7213615073

FWCI:

Cites: 40

Cited by:

Related to: 10