Year: 2026
Type: article
Abstract: Accurate thermal cycle measurement is essential for estimating the lifetime of power modules, particularly those employing SiC MOSFETs characterized by extremely low thermal capacitance. This work presents a rigorous method for estimating the die temperature variation of SiC components within power modules utilized in three-phase inverters. The approach leverages high-speed thermal imaging to accurately characterize the individual thermal impedance of each die. The resulting thermal impedance model is coupled with high-fidelity loss calculations to predict dynamic SiC die temperatures during inverter operation. Experimental results obtained under conditions representative of a 540 V / 7.5 kW aeronautical inverter demonstrate the model's accuracy in tracking dynamic SiC die temperature variations.
Source: Eletrônica de Potência
DOI: 10.18618/rep.e202637
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: diamond
OpenAlex ID: W7223679956
